Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/042408
Kind Code:
A1
Abstract:
Provided is a semiconductor having a small occupied area. This semiconductor device has a first conductive layer, a second conductive layer on the first conductive layer, a first insulating layer on the second conductive layer, a semiconductor layer and a third conductive layer on the first insulating layer, a second insulating layer on the semiconductor layer and the third conductive layer, and a fourth conductive layer on the second insulating layer. At least a portion of the second conductive layer is in contact with the upper surface of the first conductive layer; the semiconductor layer is in contact with the upper surface of the first conductive layer, the side surface of the second conductive layer, the third conductive layer, and the side surface of the first insulating layer; and the fourth conductive layer overlaps the semiconductor layer with the second insulating layer interposed therebetween.
Inventors:
JINTYOU MASAMI
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
KOEZUKA JUNICHI (JP)
IGUCHI TAKAHIRO
MISAWA CHIEKO
SATO AMI (JP)
KOEZUKA JUNICHI (JP)
Application Number:
PCT/IB2023/057980
Publication Date:
February 29, 2024
Filing Date:
August 08, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/8234; H01L27/088; H05B33/02; H10K50/10
Foreign References:
| JP2017168760A | 2017-09-21 | |||
| JP2016146422A | 2016-08-12 | |||
| JP2016111040A | 2016-06-20 | |||
| JP2012174836A | 2012-09-10 | |||
| JPH03291973A | 1991-12-24 |
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