Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/070164
Kind Code:
A1
Abstract:
A semiconductor device comprising: a chip having a main surface and made of a semiconductor of a first conduction type; a first region of a second conduction type selectivity formed in a main-surface-side surface-layer portion of the chip; an insulating film selectively formed on the main surface; an interlayer dielectric film disposed over the main surface so as to cover the insulating film; a gate electrode and a source electrode which have been disposed over the interlayer dielectric film; a gate-connection electroconductive film formed on the insulating film and electrically connected to the gate electrode; and a contact region of the second conduction type which has been selectively formed in a surface-layer portion of the first region and to which the source electrode is electrically connected. When an area of the contact region to which the source electrode has been bonded is referred to as a source/contact junction region, then the distance between the position of each of portions of the lower surface of the gate-connection electroconductive film and the source/contact junction region located nearest thereto has a maximum value of 90 μm or less.
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Inventors:
SENGA KEI (JP)
MORI SEIGO (JP)
OGAWA SHOGO (JP)
MORI SEIGO (JP)
OGAWA SHOGO (JP)
Application Number:
PCT/JP2023/027048
Publication Date:
April 04, 2024
Filing Date:
July 24, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/822; H01L27/04; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
WO2022024812A1 | 2022-02-03 | |||
WO2020031971A1 | 2020-02-13 | |||
WO2019106948A1 | 2019-06-06 | |||
WO2016047438A1 | 2016-03-31 |
Foreign References:
JP2021077914A | 2021-05-20 | |||
JP2020150179A | 2020-09-17 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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