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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/100499
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a small footprint. This semiconductor device has a transistor and a first insulating layer. The transistor has: a first conductive layer; a second conductive layer having a region that overlaps the first conductive layer with the first insulating layer interposed therebetween; and a semiconductor layer. The second conductive layer has a first opening in the region that overlaps the first conductive layer. The first insulating layer has a second opening that reaches the first conductive layer in a region that overlaps the first opening. The semiconductor layer is in contact with the upper surface of the first conductive layer, a side surface of the first insulating layer, and a side surface of the second conductive layer in the first opening and the second opening. The oxygen diffusion coefficient at 350°C in the first insulating layer is at least 5×10-12 cm2/sec.

Inventors:
SHIMA YUKINORI
KOEZUKA JUNICHI (JP)
JINTYOU MASAMI
KUMAKURA KAYO (JP)
NAKADA MASATAKA
KUSUNOKI KOJI (JP)
ATSUMI TOMOAKI (JP)
Application Number:
PCT/IB2023/061021
Publication Date:
May 16, 2024
Filing Date:
November 02, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/41; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792; H05B33/14; H10B12/00; H10B41/70; H10K50/00; H10K50/10; H10K59/10; H10K59/12; H10K59/124
Foreign References:
JP2017168760A2017-09-21
JP2017167452A2017-09-21
JP2016149552A2016-08-18
JP2016146422A2016-08-12
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