Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/100499
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a small footprint. This semiconductor device has a transistor and a first insulating layer. The transistor has: a first conductive layer; a second conductive layer having a region that overlaps the first conductive layer with the first insulating layer interposed therebetween; and a semiconductor layer. The second conductive layer has a first opening in the region that overlaps the first conductive layer. The first insulating layer has a second opening that reaches the first conductive layer in a region that overlaps the first opening. The semiconductor layer is in contact with the upper surface of the first conductive layer, a side surface of the first insulating layer, and a side surface of the second conductive layer in the first opening and the second opening. The oxygen diffusion coefficient at 350°C in the first insulating layer is at least 5×10-12 cm2/sec.
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Inventors:
SHIMA YUKINORI
KOEZUKA JUNICHI (JP)
JINTYOU MASAMI
KUMAKURA KAYO (JP)
NAKADA MASATAKA
KUSUNOKI KOJI (JP)
ATSUMI TOMOAKI (JP)
KOEZUKA JUNICHI (JP)
JINTYOU MASAMI
KUMAKURA KAYO (JP)
NAKADA MASATAKA
KUSUNOKI KOJI (JP)
ATSUMI TOMOAKI (JP)
Application Number:
PCT/IB2023/061021
Publication Date:
May 16, 2024
Filing Date:
November 02, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/41; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792; H05B33/14; H10B12/00; H10B41/70; H10K50/00; H10K50/10; H10K59/10; H10K59/12; H10K59/124
Foreign References:
| JP2017168760A | 2017-09-21 | |||
| JP2017167452A | 2017-09-21 | |||
| JP2016149552A | 2016-08-18 | |||
| JP2016146422A | 2016-08-12 |
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