SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/136170

A1

The present invention simplifies a manufacturing process. In the present invention, a semiconductor element (10) comprises: a first wiring region (wiring region 120) of a first semiconductor substrate (semiconductor substrate 110); a second wiring region (wiring region 220) of a second semiconductor substrate (semiconductor substrate 210); a first pad (pad 21) embedded in the surface of the first wiring region (wiring region 120); a second pad (pad 25) embedded in the surface of the second wiring region (wiring region 220), the second pad (pad 25) being positioned so as to overlap the first pad (pad 21) when the first wiring region (wiring region 120) and the second wiring region (wiring region 220) have been joined; a capacitance element (20) located in either one of the first pad (pad 21) and the second pad (pad 25); and a capacitance element connection pad (30) embedded in the first wiring region (wiring region 120), and connecting to the second pad (pad 25) when the first wiring region (wiring region 120) and the second wiring region (wiring region 220) have been joined.

JP7245547	RF integrated power conditioning capacitor
JPH0468575	ELECTROSTATIC BREAKDOWN PROTECTIVE ELEMENT OF SEMICONDUCTOR INTEGRATED CIRCUIT

TOMIDA KAZUYUKI (JP)
MIYAKE SHINICHI (JP)
HANZAWA KATSUHIKO (JP)

PCT/JP2022/048575

July 20, 2023

December 28, 2022

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SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

H01L27/04; H01L21/3205; H01L21/768; H01L23/522; H01L27/00

WO2019124112A1	2019-06-27
WO2014184988A1	2014-11-20

US20190123088A1	2019-04-25
JP2021048204A	2021-03-25
US20170092620A1	2017-03-30
JP2009010388A	2009-01-15
JP2008147300A	2008-06-26

SAKAI INTERNATIONAL PATENT OFFICE (JP)

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