SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2023/201448

A1

A semiconductor element (100), comprising a semiconductor stack (104), an insulation structure (114), an electrode structure (130) and a protective layer (120), wherein the insulation structure (114) is arranged on the semiconductor stack (104), and comprises a first part (116); the first part (116) comprises a first opening (170), the first opening (170) exposing an inner side wall (162) of the insulation structure (114); the protective layer (120) is arranged between the inner side wall (162) and the electrode structure (130), and comprises a second opening (172); the electrode structure (130) is arranged in the first opening (170), is in contact with the protective layer (120), and is electrically connected to the semiconductor stack (104) by means of the second opening (172); and the electrode structure (130) comprises a metal material, the insulation structure (114) comprises a first material, the protective layer (120) comprises a second material, and the reaction temperature between the second material and the metal material is higher than the reaction temperature between the first material and the metal material. Further disclosed is a manufacturing method for the semiconductor element.

CHEN CHIH-HAO (CN)
SHEN YI-RU (CN)

PCT/CN2022/000066

October 26, 2023

April 19, 2022

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GANRICH SEMICONDUCTOR CORP (CN)

H01L29/778

CN110098249A	2019-08-06
US20080284022A1	2008-11-20
US20120043591A1	2012-02-23
US20170025508A1	2017-01-26
JP2015056437A	2015-03-23

KELONG INTERNATIONAL INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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