SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME, AND COMBINATION OF SEMICONDUCTOR ELEMENTS

WIPO Patent Application WO/2013/094078

A1

This method for producing a semiconductor element involves: a step for forming a semiconductor layer on a growth substrate with a lift-off layer therebetween; a step for producing multiple semiconductor structures by forming grooves; a step for filling the grooves with a filler; a seed formation step for forming a plating seed layer; a step for forming a net-like resist above the grooves after the seed formation step; a step for forming a conductive support body by forming a plating layer from the plating seed layer that was exposed by not being covered by the resist, the plating layer being formed in a manner such that the conductive support body has a concave on top of the resist and a hole is formed on the intersection site of the resist; a step for removing at least a portion of the filler and the resist; a step for removing the lift-off layer by means of an etching solution for forming a space via the hole; and a step for fragmenting the conductive support body into multiple semiconductor elements by cutting the conductive support body along the concave.

CHO MEOUNG WHAN (KR)
LEE SEOG WOO (KR)
TOBA RYUICHI (JP)
KADOWAKI YOSHITAKA (JP)

PCT/JP2011/080548

June 27, 2013

December 21, 2011

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WAVESQUARE INC (KR)
DOWA ELECTRONICS MATERIALS CO (JP)
CHO MEOUNG WHAN (KR)
LEE SEOG WOO (KR)
TOBA RYUICHI (JP)
KADOWAKI YOSHITAKA (JP)

H01L21/306; H01L33/02

JPH08125077A	1996-05-17
JP2004363213A	2004-12-24
JPH03232253A	1991-10-16
JP2008078275A	2008-04-03
US6884646B1	2005-04-26
JPS6221239A	1987-01-29

SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)

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