Title:
SEMICONDUCTOR ELEMENT PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2017/006902
Kind Code:
A1
Abstract:
The semiconductor element (12) production method comprises steps of: forming a plurality of semiconductor elements (12) on the main surface of a wafer (11); forming a plurality of cleaving groove groups (20), each disposed on a division reference line; and cleaving the wafer (11) along the division reference line (14) to separate each of the plurality of semiconductor elements (12) from one another. At least one of the plurality of cleaving groove groups (20) is disposed with respect to four semiconductor elements (12) adjacent to one another among the plurality of semiconductor elements (12). Each of the plurality of cleaving groove groups (20) contains a plurality of cleaving grooves (21, 22, 23) disposed on the division reference line (14). In this manner, the production yield for the semiconductor elements (12) may be improved.
Inventors:
YOSHIKAWA KENJI (JP)
SUZUKI MASATO (JP)
SUZUKI MASATO (JP)
Application Number:
PCT/JP2016/069764
Publication Date:
January 12, 2017
Filing Date:
July 04, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/301; B28D5/00
Domestic Patent References:
| WO2007074688A1 | 2007-07-05 |
Foreign References:
| JP2000068240A | 2000-03-03 | |||
| JP2003086900A | 2003-03-20 | |||
| JP2002064236A | 2002-02-28 | |||
| JP2008227461A | 2008-09-25 | |||
| JP2013118250A | 2013-06-13 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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