Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/045378
Kind Code:
A1
Abstract:
This semiconductor element contains a semiconductor element layer formed from a semiconductor composition containing a semiconductor material on a substrate; when the semiconductor element is used as a thermoelectric conversion element, the semiconductor element provides a thermoelectric conversion element provided with a thermoelectric element layer which has excellent thermoelectric performance and of which the sectional shape has been controlled. Defining S(μm2) as the area of the vertical section including the center part of the semiconductor element layer, Dmax(μm) as the maximum value of the thickness-direction thickness of the vertical section and Xmax (μm) as the maximum value of the width-direction length of the vertical section, the vertical section of the semiconductor element layer satisfies conditions (A) and (B) below. (A) 0.75 ≤ S / (Dmax×Xmax) ≤ 1.00 (B) Dmax ≥ 10 μm, or (Dmax/Xmax) ≥ 0.03
Inventors:
MORITA WATARU (JP)
KATO KUNIHISA (JP)
MUTO TSUYOSHI (JP)
KATSUTA YUMA (JP)
KATO KUNIHISA (JP)
MUTO TSUYOSHI (JP)
KATSUTA YUMA (JP)
Application Number:
PCT/JP2019/033407
Publication Date:
March 05, 2020
Filing Date:
August 27, 2019
Export Citation:
Assignee:
LINTEC CORP (JP)
International Classes:
H01L35/32; C08K3/01; C08L101/00; H01L35/16; H02N11/00
Domestic Patent References:
| WO2018139475A1 | 2018-08-02 | |||
| WO2016147809A1 | 2016-09-22 |
Foreign References:
| JP2015050426A | 2015-03-16 |
Attorney, Agent or Firm:
OHTANI PATENT OFFICE (JP)
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