Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/238531
Kind Code:
A1
Abstract:
A semiconductor element according to the present invention comprises: a substrate; two or more electron-conductive layers which are sequentially stacked on the substrate and contain a group III nitride semiconductor, while having compositions different from each other; and a composition gradient layer which is arranged between at least one pair of adjacent electron-conductive layers, wherein the composition thereof changes from one electron-conductive layer side toward the other electron-conductive layer side such that the composition thereof becomes relatively closer to the composition of the other electron-conductive layer from the composition of the one electron-conductive layer. The composition gradient layer additionally contains an n-type impurity that has been doped thereinto.
Inventors:
KAWAGUCHI MASAO
Application Number:
PCT/JP2023/016127
Publication Date:
December 14, 2023
Filing Date:
April 24, 2023
Export Citation:
Assignee:
PANASONIC HOLDINGS CORP (JP)
International Classes:
H01S5/343; H01L33/32
Foreign References:
| JP2012146847A | 2012-08-02 | |||
| JP2012084836A | 2012-04-26 | |||
| JP2002217495A | 2002-08-02 | |||
| JP2009071277A | 2009-04-02 | |||
| US5670798A | 1997-09-23 |
Attorney, Agent or Firm:
TOKUDA Yoshiaki et al. (JP)
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