Title:
SEMICONDUCTOR EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND LED CHIP
Document Type and Number:
WIPO Patent Application WO/2022/141791
Kind Code:
A1
Abstract:
The present invention provides a semiconductor epitaxial structure and a manufacturing method therefor, and an LED chip. An N-type semiconductor layer, a gate elimination layer, an active layer and a P-type semiconductor layer are sequentially stacked on a surface of a substrate. By means of an epitaxial structure design, redundant electrons are released, an electron concentration is effectively improved, electron tunneling probability is increased, a working voltage of an LED is reduced while crystal quality is improved, and the antistatic capability of the LED is improved.
Inventors:
LIN ZHIWEI (CN)
CHEN KAIXUAN (CN)
CAI JIANJIU (CN)
ZHUO XIANGJING (CN)
YAO GANG (CN)
CHEN KAIXUAN (CN)
CAI JIANJIU (CN)
ZHUO XIANGJING (CN)
YAO GANG (CN)
Application Number:
PCT/CN2021/079179
Publication Date:
July 07, 2022
Filing Date:
March 05, 2021
Export Citation:
Assignee:
XIAMEN CHANGELIGHT CO LTD (CN)
International Classes:
H01L33/14
Foreign References:
| CN106409998A | 2017-02-15 | |||
| CN110635004A | 2019-12-31 | |||
| CN106299052A | 2017-01-04 | |||
| CN109346568A | 2019-02-15 | |||
| CN206225396U | 2017-06-06 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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