Title:
SEMICONDUCTOR EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND LED CHIP
Document Type and Number:
WIPO Patent Application WO/2022/165895
Kind Code:
A1
Abstract:
The present invention provides a semiconductor epitaxial structure and a manufacturing method therefor, and an LED chip. A cooling layer and a deep well layer are sequentially disposed on the side surface of at least one barrier layer close to a first-type semiconductor layer, and a shallow well layer and a heating layer are sequentially disposed on the side surface of the at least one barrier layer close to a second-type semiconductor layer. The cooling layer and the heating layer are used for growth temperature transition between the barrier layer and a potential well layer, and the deep well layer and the shallow well layer are used for electron confinement to the barrier layer. By controlling the growth temperature, the stress between the barrier layer and the potential well layer can be effectively released; in addition, further forming well structures on front and rear ends of the potential well layer facilitates enhancing the electron confinement to the barrier layer, thereby improving the quantum efficiency in the barrier layer.
Inventors:
LIN ZHIWEI (CN)
CHEN KAIXUAN (CN)
CAI JIANJIU (CN)
ZHUO XIANGJING (CN)
YAO GANG (CN)
CHEN KAIXUAN (CN)
CAI JIANJIU (CN)
ZHUO XIANGJING (CN)
YAO GANG (CN)
Application Number:
PCT/CN2021/079038
Publication Date:
August 11, 2022
Filing Date:
March 04, 2021
Export Citation:
Assignee:
XIAMEN CHANGELIGHT CO LTD (CN)
International Classes:
H01L33/06
Foreign References:
| CN109755361A | 2019-05-14 | |||
| CN105226148A | 2016-01-06 | |||
| CN106972083A | 2017-07-21 | |||
| CN110416374A | 2019-11-05 | |||
| CN103811601A | 2014-05-21 | |||
| JP2002043618A | 2002-02-08 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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