Title:
SEMICONDUCTOR FILM PRODUCTION METHOD, SEMICONDUCTOR FILM, DOPING COMPLEX COMPOUND, AND DOPING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/052097
Kind Code:
A1
Abstract:
Provided are: a semiconductor film uniformly doped with silicon and having excellent electrical properties; and a production method therefor. The present invention uses a dopant material that includes a complex compound, said complex compound containing at least silicon, a halogen, and a hydrocarbon group or heterocyclic group, either of which may have a substituent group, and dopes a semiconductor film with the same so as to obtain a semiconductor film doped with Si, wherein doping occurs up to a depth of at least 0.3 μm or more from the film surface, the carrier density is 1×1020/cm3 or less, the mobility is 1 cm2/Vs or more, and the film thickness is 100 μm or less.
Inventors:
FUJITA SHIZUO (JP)
UCHIDA TAKAYUKI (JP)
KANEKO KENTARO (JP)
ODA MASAYA (JP)
HITORA TOSHIMI (JP)
UCHIDA TAKAYUKI (JP)
KANEKO KENTARO (JP)
ODA MASAYA (JP)
HITORA TOSHIMI (JP)
Application Number:
PCT/JP2017/033358
Publication Date:
March 22, 2018
Filing Date:
September 14, 2017
Export Citation:
Assignee:
FLOSFIA INC (JP)
UNIV KYOTO (JP)
UNIV KYOTO (JP)
International Classes:
H01L21/365; C23C16/40; H01L21/336; H01L21/337; H01L21/338; H01L21/368; H01L29/12; H01L29/739; H01L29/778; H01L29/78; H01L29/786; H01L29/808; H01L29/812; H01L29/872; H01L33/26
Foreign References:
| JP2008522437A | 2008-06-26 | |||
| JP2011529804A | 2011-12-15 | |||
| JP2011096884A | 2011-05-12 | |||
| JP2003273398A | 2003-09-26 | |||
| JP2015091740A | 2015-05-14 |
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