Title:
SEMICONDUCTOR IMAGE SENSOR
Document Type and Number:
WIPO Patent Application WO/2021/205662
Kind Code:
A1
Abstract:
Provided is a semiconductor image sensor which enables integration with high sensitivity to near infrared light in a small area. This semiconductor image sensor comprises: a light receiving element that is formed on a silicon substrate below an insulating film of an SOI substrate which includes the silicon substrate, the insulating film formed on the silicon substrate, and a semiconductor layer formed on the insulating film, the light receiving element comprising a pn junction diode which is formed in a direction perpendicular to a main surface of the silicon substrate and is sensitive to near infrared light; and a high voltage generating circuit that generates an applied voltage for applying a reverse bias voltage to the pn junction diode. The silicon substrate has an impurity concentration in a range of 1×1012/cm3 to 1×1014/cm3 and a thickness in a range of 300 to 700 μm, and the applied voltage is in a range of 10 to 60V.
Inventors:
KURACHI IKUO (JP)
TAKANO HIROSHI (JP)
KASHIMA YASUMASA (JP)
TAKANO HIROSHI (JP)
KASHIMA YASUMASA (JP)
Application Number:
PCT/JP2020/016184
Publication Date:
October 14, 2021
Filing Date:
April 10, 2020
Export Citation:
Assignee:
OPTOHUB CO LTD (JP)
International Classes:
H01L27/144; H01L27/146; H04N5/369
Foreign References:
| JP2010041010A | 2010-02-18 | |||
| JP2001503918A | 2001-03-21 | |||
| JP2003520441A | 2003-07-02 | |||
| JP2005340479A | 2005-12-08 | |||
| JP2017108062A | 2017-06-15 | |||
| JPH07177729A | 1995-07-14 |
Other References:
OSHIYAMA ET AL.: "Near- infrared sensitivity enhancement of a back-illuminated complementary metal oxide semiconductor image sensor with a pyramid surface for diffraction structure", IEEE TECH. DIGEST. OF IEDM 2017, 2017, pages 397 - 400
See also references of EP 4135038A4
See also references of EP 4135038A4
Attorney, Agent or Firm:
HAGIHARA Makoto (JP)
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