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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND HIGH FREQUENCY POWER AMPLIFIER MODULE
Document Type and Number:
WIPO Patent Application WO/2013/031440
Kind Code:
A1
Abstract:
A semiconductor integrated circuit device and a high frequency power amplifier module capable of achieving a plurality of detection schemes in a small area are provided. For example, a log detection portion and a linear detection portion are provided, wherein the log detection portion includes a multi-stage amplifier circuit (AMP4 to AMP1), a plurality of level detection circuits (DET4 to DET1), and adder circuits (ADD1, ADD2) and the like, and the linear detection portion includes a level detection circuit (DET6) and the like. To achieve a plurality of detection schemes, an output current from the log detection portion and an output current from the linear detection portion are multiplied with different coefficients, and then added. Specifically, a log detection scheme is achieved by adding the result of multiplying the output current from the log detection portion by 6/5 to the output current from the linear detection portion. A log-linear detection scheme is achieved by adding the result of multiplying the output current from the log detection portion by 1/5 to the result of multiplying the output current from the linear detection portion by three.

Inventors:
SHIMAMUNE YUSUKE (JP)
YOSHIZAKI YASUNOBU (JP)
HAYASHI NORIO (JP)
TSUTSUI TAKAYUKI (JP)
Application Number:
PCT/JP2012/068973
Publication Date:
March 07, 2013
Filing Date:
July 26, 2012
Export Citation:
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Assignee:
MURATA MANUFACTURING CO (JP)
SHIMAMUNE YUSUKE (JP)
YOSHIZAKI YASUNOBU (JP)
HAYASHI NORIO (JP)
TSUTSUI TAKAYUKI (JP)
International Classes:
H03D1/18; H03F3/68; H03F3/24; H03G3/30; H04B1/04
Domestic Patent References:
WO2003073627A12003-09-04
Foreign References:
JP2007174553A2007-07-05
JP2011055446A2011-03-17
JP2003298431A2003-10-17
JPH0884036A1996-03-26
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
Yoshiyuki Inaba (JP)
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Claims: