Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/167083
Kind Code:
A1
Abstract:
Provided is an effective structure for an electrostatic discharge (ESD) protection circuit in which a nanosheet device is used. A device structure (21) that constitutes one of an anode or a cathode is disposed opposite a device structure (22) that constitutes the other thereof in a Y-direction, and is disposed opposite a device structure (24) that constitutes the other in an X-direction. The device structure (21) comprises a pad group of a first conductivity type, and the device structures (22, 24) comprise pad groups of a second conductivity type. The length (w3) of the pad group of the device structure (21) in a range in the X-direction that is disposed opposite the pad group of the device structure (22) in the Y-direction is greater than the length (w2×2) thereof in a range in the Y-direction that is disposed opposite the pad group of the device structure (24) in the X-direction.
Inventors:
SOBUE ISAYA (JP)
Application Number:
PCT/JP2023/006559
Publication Date:
September 07, 2023
Filing Date:
February 22, 2023
Export Citation:
Assignee:
SOCIONEXT INC (JP)
International Classes:
H01L27/04; H01L21/822; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/16; H01L29/861; H01L29/868
Domestic Patent References:
| WO2020235082A1 | 2020-11-26 | |||
| WO2017212644A1 | 2017-12-14 |
Foreign References:
| JP2013004676A | 2013-01-07 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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