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Title:
SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR LASER PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2023/228234
Kind Code:
A1
Abstract:
A semiconductor laser (100) comprises a ridge (5) that is formed in an n-type semiconductor substrate (1) and an embedded layer (25) that is embedded so as to cover both sides in an x direction perpendicular to a y direction, which is the direction in which the ridge extends. Provided to the positive side of a z direction, which is the direction in which the ridge protrudes, and to the z direction positive side of the embedded layer are a p-type second cladding layer (9), a p-type contact layer (10), a surface-side electrode (12) that is connected to the p-type contact layer, and a semi-insulating layer (11) that is formed on an outer edge which is separated from the ridge in the x direction. The semi-insulating layer or the surface-side electrode is formed on the z direction positive side toward ends (29a, 29b) of the semiconductor laser (100) in the x direction.

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Inventors:
MAEHARA HIROAKI (JP)
TAIRA SATOSHI (JP)
FUCHIDA AYUMI (JP)
SUZUKI RYOKO (JP)
MIYAGOSHI RYOSUKE (JP)
Application Number:
PCT/JP2022/021063
Publication Date:
November 30, 2023
Filing Date:
May 23, 2022
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/223; H01S5/227
Domestic Patent References:
WO2019220514A12019-11-21
WO2019229799A12019-12-05
Foreign References:
JP2013182976A2013-09-12
JP2016076612A2016-05-12
JP2019192879A2019-10-31
JP2009004451A2009-01-08
Attorney, Agent or Firm:
PALMO PATENT FIRM, P.C. (JP)
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