SEMICONDUCTOR LASER DEVICE

WIPO Patent Application WO/2017/022142

A1

This semiconductor laser device is provided with: a semiconductor laser bar 11 which emits a plurality of beams having different wavelengths from connected emission regions; a light condensing optical system 13 which condenses the plurality of beams; a wavelength dispersion optical system 14 having a wavelength dispersion function; an optical filter 15 in which the wavelengths of the transmitted beams are cyclically different; an aperture 16 disposed on the optical path for the plurality of beams superposed on the same axis; and a partial reflection mirror 17. A total reflection mirror 19 is formed on the rear surface of the semiconductor laser bar 11, and each wavelength of the plurality of beams having different wavelengths, which are reflected by the total reflection mirror 19 and emitted from the semiconductor laser bar 11, is the same as the wavelength of the beam transmitted by the optical filter 15.

YAMAMOTO TATSUYA (JP)
MORITA DAIJI (JP)
KAWASAKI MASATO (JP)
KUBA KAZUKI (JP)
NISHIMAE JUNICHI (JP)
KOJIMA TETSUO (JP)

PCT/JP2015/086380

February 09, 2017

December 25, 2015

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MITSUBISHI ELECTRIC CORP (JP)

H01S5/14; H01S5/022; H01S5/068

WO2005013446A1

2005-02-10

US6665471B1	2003-12-16
US20030193974A1	2003-10-16
JP2000174368A	2000-06-23
JP2002335039A	2002-11-22
JPH10215017A	1998-08-11
JP2014216361A	2014-11-17
JP2009535802A	2009-10-01
JPH08274393A	1996-10-18
JPH10303495A	1998-11-13
JP2007110039A	2007-04-26
JP2005519476A	2005-06-30
US6192062B1	2001-02-20

TAKAMURA, Jun (JP)

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