Title:
SEMICONDUCTOR LASER AND DISPLAY DEVICE THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/206123
Kind Code:
A1
Abstract:
Disclosed in the present invention are a semiconductor laser and a display device thereof. The semiconductor laser comprises a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween; a first waveguide layer is provided between the first semiconductor layer and the active layer, and a second waveguide layer is provided between the second semiconductor layer and the active layer; an electron blocking layer is provided between the second waveguide layer and the second semiconductor layer; the side of the electron blocking layer close to the second semiconductor layer comprises at least a part of a P-type doped layer, wherein the composition of the P-type doped layer is greater than 1E19-3; and the P-type doping concentration of the side of the electron blocking layer close to the second semiconductor layer is higher than the P-type doping concentration of the side of the electron blocking layer away from the second semiconductor layer, thereby preventing the rise of light absorption of the second waveguide layer caused by the diffusion of the P-type doping to the second waveguide layer.
Inventors:
WANG YUSHOU (CN)
Application Number:
PCT/CN2022/089489
Publication Date:
November 02, 2023
Filing Date:
April 27, 2022
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01S5/343
Foreign References:
| CN109075530A | 2018-12-21 | |||
| US20150263228A1 | 2015-09-17 | |||
| CN111326631A | 2020-06-23 | |||
| CN107069433A | 2017-08-18 | |||
| CN104782005A | 2015-07-15 | |||
| US6242761B1 | 2001-06-05 |
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