Title:
SEMICONDUCTOR LASER ELEMENT HAVING A DIVERGING REGION
Document Type and Number:
WIPO Patent Application WO2001048874
Kind Code:
A3
Abstract:
A semiconductor ridge laser for coupling to a single-mode optical fiber has a ridge with a narrow parallel region, a diverging region, and then a wide parallel region that is adjacent to an output facet. A pump region for the laser may be less than the entire area of the ridge and have a "T" shape. Preferably, the ridge has a depth of about 350 to 550 nm and the narrow parallel region has a length of more than 0.4 times the overall length of the ridge. The wide parallel region at the output enables the laser to obtain low thermal resistance, which leads to a low operating temperature, a low power density in the laser cavity, and low astigmatism.
More Like This:
Inventors:
BALSAMO STEFANO (IT)
GHISLOTTI GIORGIO (IT)
MORASCA SALVATORE (IT)
TREZZI FIORENZO (IT)
GHISLOTTI GIORGIO (IT)
MORASCA SALVATORE (IT)
TREZZI FIORENZO (IT)
Application Number:
PCT/EP2000/013057
Publication Date:
December 13, 2001
Filing Date:
December 20, 2000
Export Citation:
Assignee:
OPTICAL TECHNOLOGIES ITALIA (IT)
BALSAMO STEFANO (IT)
GHISLOTTI GIORGIO (IT)
MORASCA SALVATORE (IT)
TREZZI FIORENZO (IT)
BALSAMO STEFANO (IT)
GHISLOTTI GIORGIO (IT)
MORASCA SALVATORE (IT)
TREZZI FIORENZO (IT)
International Classes:
H01S5/22; H01S5/042; H01S5/10; H01S5/20; (IPC1-7): H01S5/10; H01S5/22
Foreign References:
| US4942585A | 1990-07-17 | |||
| GB2080609A | 1982-02-03 |
Other References:
TAKEMASA TAMANUKI ET AL: "HIGH POWER AND NARROW LATERAL FAR FIELD DIVERGENCE 1.5MUM-EYE-SAFE PULSE LASER DIODES WITH FLARED WAVEGUIDE", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS,US,NEW YORK, IEEE, vol. CONF. 7, 1995, pages 725 - 728, XP000630705, ISBN: 0-7803-2148-0
SATO H ET AL: "IMPROVED HIGH-TEMPERATURE CHARACTERISTICS IN A THICKNESS-TAPERED 1.3-MUM BEAM-EXPANDER INTEGRATED RIDGE-WAVEGUIDE LASER", IEEE PHOTONICS TECHNOLOGY LETTERS,US,IEEE INC. NEW YORK, vol. 10, no. 4, 1 April 1998 (1998-04-01), pages 484 - 486, XP000754201, ISSN: 1041-1135
EL YUMIN S ET AL: "TAPER-SHAPE DEPENDENCE OF TAPERED-WAVEGUIDE TRAVELING WAVE SEMICONDUCTOR LASER AMPLIFIER (TTW-SLA)", IEICE TRANSACTIONS ON ELECTRONICS,JP,INSTITUTE OF ELECTRONICS INFORMATION AND COMM. ENG. TOKYO, vol. E77-C, no. 4, 1 April 1994 (1994-04-01), pages 624 - 632, XP000460067, ISSN: 0916-8524
PATENT ABSTRACTS OF JAPAN vol. 014, no. 163 (E - 0910) 29 March 1990 (1990-03-29)
PATENT ABSTRACTS OF JAPAN vol. 010, no. 169 (P - 468) 14 June 1986 (1986-06-14)
SATO H ET AL: "IMPROVED HIGH-TEMPERATURE CHARACTERISTICS IN A THICKNESS-TAPERED 1.3-MUM BEAM-EXPANDER INTEGRATED RIDGE-WAVEGUIDE LASER", IEEE PHOTONICS TECHNOLOGY LETTERS,US,IEEE INC. NEW YORK, vol. 10, no. 4, 1 April 1998 (1998-04-01), pages 484 - 486, XP000754201, ISSN: 1041-1135
EL YUMIN S ET AL: "TAPER-SHAPE DEPENDENCE OF TAPERED-WAVEGUIDE TRAVELING WAVE SEMICONDUCTOR LASER AMPLIFIER (TTW-SLA)", IEICE TRANSACTIONS ON ELECTRONICS,JP,INSTITUTE OF ELECTRONICS INFORMATION AND COMM. ENG. TOKYO, vol. E77-C, no. 4, 1 April 1994 (1994-04-01), pages 624 - 632, XP000460067, ISSN: 0916-8524
PATENT ABSTRACTS OF JAPAN vol. 014, no. 163 (E - 0910) 29 March 1990 (1990-03-29)
PATENT ABSTRACTS OF JAPAN vol. 010, no. 169 (P - 468) 14 June 1986 (1986-06-14)
Download PDF: