Title:
SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/152872
Kind Code:
A1
Abstract:
The present invention comprises: a ridge (22) in which an n-type clad layer (14), a lower-side light confinement layer (16), an active layer (18), and an upper-side light confinement layer (20) are laminated in order from the bottom; current blocking layers (30) which are embedded in both sides of the ridge (22) and in each of which a semi-insulating blocking layer (24) that covers a side surface of the ridge (22), an intermediate blocking layer (26), and an n-type blocking layer (28) are laminated in order from the bottom; and a p-type clad layer (32) formed on the ridge (22) and the current blocking layer (30). The uppermost layer of the ridge (22) is the upper-side light confinement layer (20). The intermediate blocking layer (26) has a higher energy level at the bottom of a conduction band than the semi-insulating blocking layer (24).
Inventors:
ERA ATSUSHI (JP)
Application Number:
PCT/JP2022/005357
Publication Date:
August 17, 2023
Filing Date:
February 10, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/22
Domestic Patent References:
| WO2005031829A1 | 2005-04-07 |
Foreign References:
| JPH0923036A | 1997-01-21 | |||
| JPH11266051A | 1999-09-28 | |||
| JP2013254908A | 2013-12-19 | |||
| JP2010258273A | 2010-11-11 | |||
| JP2014154797A | 2014-08-25 | |||
| JPH0697592A | 1994-04-08 | |||
| US20040057646A1 | 2004-03-25 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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