Title:
SEMICONDUCTOR LASER AND METHOD FOR MAKING SAME
Document Type and Number:
WIPO Patent Application WO/2022/259448
Kind Code:
A1
Abstract:
This semiconductor laser comprises, above a substrate (101), an active layer (103) that extends in the waveguide direction and that is formed in a core shape. The semiconductor laser also comprises a diffraction grating (110) in a resonator. A first clad layer (102) is formed on the substrate (101). The semiconductor laser has the active layer (103) above the first clad layer (102). The semiconductor laser also comprises a second clad layer (106) formed above the active layer (103). The diffraction grating (110) is formed on the side of the first clad layer (102) of the resonator or on the side of the second clad layer (106) and is formed separately from the boundary area between the core of the resonator and the first clad layer (102) or the second clad layer (106).
Inventors:
AIHARA TAKUMA (JP)
MATSUO SHINJI (JP)
HIRAKI TATSURO (JP)
TSUCHIZAWA TAI (JP)
MATSUO SHINJI (JP)
HIRAKI TATSURO (JP)
TSUCHIZAWA TAI (JP)
Application Number:
PCT/JP2021/022054
Publication Date:
December 15, 2022
Filing Date:
June 10, 2021
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/12
Domestic Patent References:
| WO2020145128A1 | 2020-07-16 | |||
| WO2021005700A1 | 2021-01-14 |
Foreign References:
| JP2006330104A | 2006-12-07 | |||
| JP2006165027A | 2006-06-22 | |||
| US20130003771A1 | 2013-01-03 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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