Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/1999/014833
Kind Code:
A1
Abstract:
A semiconductor laser in the wavelength band of 1.3-1.55 $g(m)m has been developed conventionally but a semiconductor laser in the wavelength band of 2 $g(m)m, for which a wide field of technological application is expected, has not been developed sufficiently. A high-performance semiconductor laser oscillating in a wavelenght band of 2 $g(m)m, specifically a compression strain quantum well semiconductor laser employing InGaAs/InGaAsP material oscillating in 2 $g(m)m wavelength band, characterized in that the difference $g(D)E between the band gap Eocl of an optical confinement layer and the emission transition energy Ewell between the ground levels of a quantum well layer is 275-300 meV.
Inventors:
DONG JIE (JP)
MATSUMOTO KOH (JP)
MATSUMOTO KOH (JP)
Application Number:
PCT/JP1998/003990
Publication Date:
March 25, 1999
Filing Date:
September 07, 1998
Export Citation:
Assignee:
NIPPON OXYGEN CO LTD (JP)
DONG JIE (JP)
MATSUMOTO KOH (JP)
DONG JIE (JP)
MATSUMOTO KOH (JP)
International Classes:
H01S5/00; H01S5/343; H01S5/34; (IPC1-7): H01S3/18
Foreign References:
| JPH08288586A | 1996-11-01 | |||
| JPH05259571A | 1993-10-08 | |||
| JPH09298338A | 1997-11-18 |
Other References:
ELECTRONICS LETTERS, Vol. 28, No. 15, (1992), S. FOROUHAR et al., "InGaAs/InGaAsP Strained-Layer Quantum Well Lasers at 2 mum", p. 1431-1432.
IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 5, No. 6, (1993), J.S. MAJOR et al., "High-Power 2.0 mum InGaAsP Laser Diodes", p. 594-596.
IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 5, No. 6, (1993), J.S. MAJOR et al., "High-Power 2.0 mum InGaAsP Laser Diodes", p. 594-596.
Attorney, Agent or Firm:
Shiga, Masatake (Takadanobaba 3-chome Shinjuku-ku Tokyo, JP)
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