Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO2005060013
Kind Code:
A8
Abstract:
A semiconductor multilayer portion (6) is formed by stacking an n-type gallium nitride compound semiconductor layer (3) and a p-type gallium nitride compound semiconductor layer (5) so as to form a light-emitting portion, and a light-transmitting conductive layer (7) is formed on a surface of the semiconductor multilayer portion. A part of the light-transmitting conductive layer is removed, and an upper electrode (8) is so formed to be in contact with the exposed surface of the semiconductor multilayer portion and the light-transmitting conductive layer. By providing the surface of the semiconductor multilayer portion which is exposed through an opening (7a) of the light-transmitting conductive layer with a current blocking means (10), current is significantly prevented from flowing into a part under the upper electrode while securing good adhesion between the upper electrode and the surface of the semiconductor multilayer portion. Consequently, there can be obtained a semiconductor light-emitting device using a gallium nitride compound wherein the external quantum efficiency is improved by suppressing light emission under the upper electrode while enhancing adhesion between the upper electrode and the semiconductor layer.
Inventors:
ITO NORIKAZU (JP)
SONOBE MASAYUKI (JP)
NAKAGAWA DAISUKE (JP)
SONOBE MASAYUKI (JP)
NAKAGAWA DAISUKE (JP)
Application Number:
PCT/JP2004/018810
Publication Date:
October 06, 2005
Filing Date:
December 16, 2004
Export Citation:
Assignee:
ROHM CO LTD (JP)
ITO NORIKAZU (JP)
SONOBE MASAYUKI (JP)
NAKAGAWA DAISUKE (JP)
ITO NORIKAZU (JP)
SONOBE MASAYUKI (JP)
NAKAGAWA DAISUKE (JP)
International Classes:
H01L33/06; H01L33/32; H01L33/42; H01S5/323; (IPC1-7): H01L33/00; H01S5/323
Download PDF: