Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/070276
Kind Code:
A1
Abstract:
Provided is a semiconductor light-emitting device with which a degeneration reaction that may cause physical damage can be suppressed. This semiconductor light-emitting device comprises: a semiconductor light-emitting element (10A) that is obtained by forming a semiconductor layer (12) that includes a light-emitting layer (12b) on a first surface of a nitride semiconductor substrate (11), and forming an electrode (first electrode) (13) on a second surface which is on the opposite side of the first surface of the nitride semiconductor substrate (11); a submount (20) on which the semiconductor light-emitting element (10A) is placed; and a joining layer (30) that joins the electrode (13) and the submount (20). The entire surface of the second surface of the nitride semiconductor substrate (11) is spaced apart from the joining layer (30).
Inventors:
YASUDA TOSHIKI (JP)
MARUYAMA SHUN (JP)
MARUYAMA SHUN (JP)
Application Number:
PCT/JP2019/039782
Publication Date:
April 15, 2021
Filing Date:
October 09, 2019
Export Citation:
Assignee:
USHIO OPTO SEMICONDUCTORS INC (JP)
International Classes:
H01S5/022
Foreign References:
| JP2010225767A | 2010-10-07 | |||
| JP2008171971A | 2008-07-24 | |||
| JP2011040667A | 2011-02-24 | |||
| JP2017112194A | 2017-06-22 | |||
| JP2015211135A | 2015-11-24 | |||
| JP2009177211A | 2009-08-06 |
Attorney, Agent or Firm:
KONISHI, Kay et al. (JP)
Download PDF: