SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING SAME, AND LIGHT SOURCE DEVICE

WIPO Patent Application WO/2013/114480

A1

A semiconductor light-emitting element (101) is provided with a semiconductor laminate structure (20) comprising a nitride-based semiconductor including an active layer (22) for emitting polarized light, a non-polar surface or a semi-polar surface being the principal surface. The semiconductor light-emitting element (101) has a stripe structure (50) including a plurality of recessed parts provided in a position that crosses an outgoing beam path of polarized light, and an angle formed between the extending direction of recessed parts (50b) and a polarization direction of the polarized light is no less than 0° and no more than 45°. The plurality of recessed parts (50b) include a fine uneven structure (texture) (51) that is shallower than the depth of the recessed parts (50b) in at least a portion of the outer surface of the plurality of recessed parts (50b).

JP3406907	SEMICONDUCTOR LIGHT-EMITTING DIODE
JPS5810876	[Title of the Invention] Hand Uyahatsu red-algae Thio-Yobi-So-Nose-Houhou

FUJITA TOSHIYUKI
INOUE AKIRA
YOKOGAWA TOSHIYA

PCT/JP2012/005972

August 08, 2013

September 20, 2012

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PANASONIC CORP (JP)

H01L33/16; H01L33/22; H01L33/32

JP2011211075A	2011-10-20
JP2011211076A	2011-10-20
JP2011216643A	2011-10-27
JP2011187658A	2011-09-22
JP2011119333A	2011-06-16
JP2009239075A	2009-10-15
JP2007220972A	2007-08-30
JP2011014936A	2011-01-20
JP2007243047A	2007-09-20
JP2007088273A	2007-04-05

MAEDA & PARTNERS (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)

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