SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

Title:

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2021/075439

Kind Code:

A1

Abstract:

Provided are a semiconductor light-emitting element that can mitigate multi-peaking in an emission spectrum to obtain a single peak, and a manufacturing method for the same. This semiconductor light-emitting element has a second conductivity type cladding layer on a light extraction side thereof, wherein a light extraction surface of this second conductivity type cladding layer has an arithmetic mean roughness Ra of 0.07 μm to 0.7 μm and a skewness Rsk that is a positive value.

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Inventors:

TANAKA OSAMU (JP)
KADOWAKI YOSHITAKA (JP)

Application Number:

PCT/JP2020/038679

Publication Date:

April 22, 2021

Filing Date:

October 13, 2020

Export Citation:

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Assignee:

DOWA ELECTRONICS MATERIALS CO (JP)

International Classes:

H01L33/22; H01L21/205; H01L33/10; H01L33/30; H01S5/20; H01S5/343

Domestic Patent References:

WO2018198982A1

2018-11-01

Foreign References:

KR101633871B1	2016-06-28
JP2000349331A	2000-12-15
JP2009032866A	2009-02-12
US6108360A	2000-08-22
JP6648329B2	2020-02-14

Attorney, Agent or Firm:

SUGIMURA Kenji (JP)

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