Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING MODULE
Document Type and Number:
WIPO Patent Application WO/2024/101126
Kind Code:
A1
Abstract:
A semiconductor light-emitting element (100, 200, 300) comprises: a substrate (10); and a semiconductor layer 20. The substrate has a first main surface (10a) and a second main surface (10b) opposite to the first main surface. The semiconductor layer has an n-type semiconductor layer (21) disposed on the first main surface, an active layer (22) which is disposed on the n-type semiconductor layer and which generates deep ultraviolet light, and a p-type semiconductor layer (23) disposed on the active layer. The semiconductor layer has a mesa structure (24). The second main surface has a first region (10ba) that is opposite to the mesa structure, and a second region (10bb) located around the first region. The region is composed of a flat surface. An recess-projection structure (10c, 10d) is formed in the second region. The width of the first region is 0.1-3.0 times of that of the mesa structure in a plan view.
Inventors:
INOUE SHINICHIRO (JP)
Application Number:
PCT/JP2023/038163
Publication Date:
May 16, 2024
Filing Date:
October 23, 2023
Export Citation:
Assignee:
NAT INST INF & COMM TECH (JP)
International Classes:
H01L33/22; H01L33/56
Foreign References:
| JP2012231122A | 2012-11-22 | |||
| JP2017063099A | 2017-03-30 | |||
| JP2018174238A | 2018-11-08 | |||
| JP2019087710A | 2019-06-06 | |||
| JPH04100277A | 1992-04-02 | |||
| JP2006108635A | 2006-04-20 | |||
| US20150129915A1 | 2015-05-14 | |||
| JP2017538290A | 2017-12-21 | |||
| JP2016207754A | 2016-12-08 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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