SEMICONDUCTOR LIGHT-EMITTING ELEMENT

WIPO Patent Application WO/2016/152842

A1

A semiconductor light-emitting element according to the present invention has a first semiconductor layer having a first conductivity type, a light-emitting function layer being formed on the first semiconductor layer, and a second semiconductor layer being formed on the light-emitting function layer and having a second conductivity type being the opposite conductivity type from the first semiconductor layer, and is characterized in that the light-emitting function layer has: a base layer being formed on the first semiconductor layer, having a plurality of base segments which have a composition that receives stress-strain from the first semiconductor layer and are formed in a random mesh shape, and being doped with a dopant of the second conductivity type; and a quantum well light-emitting layer being formed on the base layer.

FUJIWARA TAKAKO (JP)
SUGIYAMA MASAKAZU (JP)

PCT/JP2016/058952

September 29, 2016

March 22, 2016

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STANLEY ELECTRIC CO LTD (JP)
UNIV TOKYO (JP)

H01L33/22; H01L33/04; H01L33/32

WO2014181558A1	2014-11-13
WO2016072276A1	2016-05-12

JPH10145000A	1998-05-29
JPH10294532A	1998-11-04
JP2008535215A	2008-08-28
US5780867A	1998-07-14

TOMONARI SHIODA ET AL.: "A Proposal of InGaN- Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy", IEICE TECHNICAL REPORT. ED. ELECTRON DEVICES, vol. 108, no. 321, 27 November 2008 (2008-11-27), pages 13 - 16, XP009506268

LEXT, P. C. (JP)
Patent business corporation レクスト international patent firm (JP)

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