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Title:
SEMICONDUCTOR LITHOGRAPHY FILM FORMING COMPOSITION, AND RESIST PATTERN FORMING METHOD AND DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/059202
Kind Code:
A1
Abstract:
Provided is a semiconductor lithography film forming composition containing a nitryl compound.

Inventors:
ECHIGO MASATOSHI (JP)
MAKINOSHIMA TAKASHI (JP)
Application Number:
PCT/JP2018/034553
Publication Date:
March 28, 2019
Filing Date:
September 19, 2018
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Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
G03F7/11; G03F7/20; H01L21/027
Domestic Patent References:
WO2011125839A12011-10-13
WO2016163456A12016-10-13
WO2012117949A12012-09-07
Foreign References:
JP2016060886A2016-04-25
JP2016044272A2016-04-04
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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