Title:
SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/163396
Kind Code:
A1
Abstract:
A rotational mechanism unit (20) rotates a wafer (10) including an area to be etched that is to be at least partly etched. An etching mechanism unit (30) etches the area to be etched. A thickness measuring function (40) generates chronological thickness data by measuring the thickness of the area to be etched. An etching control function (50) causes the etching mechanism unit (30) to be stopped at a point in time at which a thickness representative value (7a) of the area to be etched has reached a target thickness value. A thickness calculation function (60), in each unit period in which the wafer (10) is rotated N times, N being a natural number, calculates the thickness representative value (7a) on the basis of a measured value (7) in the chronological thickness data in a measurement interval which is the range measured during the unit period.
Inventors:
TANAKA HIROSHI (JP)
Application Number:
PCT/JP2017/009661
Publication Date:
September 13, 2018
Filing Date:
March 10, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/306; H01L21/3065; H01L21/66
Foreign References:
| JPS5756933A | 1982-04-05 | |||
| JP2000212773A | 2000-08-02 | |||
| JPH08260165A | 1996-10-08 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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