Title:
SEMICONDUCTOR MARK AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/213032
Kind Code:
A1
Abstract:
Disclosed in the present invention are a semiconductor mark and a forming method therefor. The semiconductor mark comprises: a front layer mark, the front layer mark comprising first graphics and second graphics, the second graphics being located between the adjacent first graphics, and the first graphics and the second graphics having different material properties. The first graphics and the second graphics in the front layer mark in the semiconductor mark of the present invention have different material properties, so that during measurement, the first graphics and the second graphics have different reflectivities to measuring light; therefore, the image contrast between the first graphics and the second graphics obtained during measurement is improved, and the positions and boundaries of the first graphics and the second graphics are clearly determined, thereby making the measurement of the front layer mark more accurate.
Inventors:
ZHANG SHENGAN (CN)
Application Number:
PCT/CN2021/079668
Publication Date:
October 28, 2021
Filing Date:
March 09, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G03F7/20; G01B11/00; G03F9/00; H01L21/68; H01L23/544
Foreign References:
| US5528372A | 1996-06-18 | |||
| CN101593744A | 2009-12-02 | |||
| CN101158814A | 2008-04-09 | |||
| CN204303805U | 2015-04-29 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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