Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/102283
Kind Code:
A1
Abstract:
A semiconductor memory device according to an embodiment of the present disclosure comprises multiple memory cells and a control circuit. Each memory cell includes a magnetization reversal memory element and a first switch element for controlling a current flowing to the magnetization reversal memory element. The control circuit performs write control based on asymmetry of a write error rate curve with respect to a write voltage of the magnetization reversal memory element.
Inventors:
TATSUNO TARO (JP)
Application Number:
PCT/JP2021/036672
Publication Date:
May 19, 2022
Filing Date:
October 04, 2021
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
G11C11/16; H01L21/8239; H01L27/105; H01L29/82; H01L43/08
Foreign References:
| JP2011192345A | 2011-09-29 | |||
| US20170372762A1 | 2017-12-28 | |||
| US20160163254A1 | 2016-06-09 | |||
| US20130051132A1 | 2013-02-28 | |||
| JP2006019005A | 2006-01-19 | |||
| JP2014093530A | 2014-05-19 | |||
| JP2019057343A | 2019-04-11 | |||
| JP2012014787A | 2012-01-19 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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