Title:
SEMICONDUCTOR PARTICLES, DISPERSION, FILM, OPTICAL FILTER, BUILDING MEMBER, AND RADIANT COOLING DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/173707
Kind Code:
A1
Abstract:
Semiconductor particles including a group 12-16 semiconductor containing a group 12 element and a group 16 element, a group 13-15 semiconductor containing a group 13 element and a group 15 element, or a group 14 semiconductor containing a group 14 element, the semiconductor particles having a plasma frequency of 1.7 x 1014 rad/s to 4.7 x 1014 rad/s and a maximum length of 1-2,000 nm; and a dispersion, a film, an optical filter, a building member, or a radiant cooling device in which the semiconductor particles are used.
Inventors:
ONO MASASHI (JP)
YASUDA HIDEKI (JP)
YASUDA HIDEKI (JP)
Application Number:
PCT/JP2018/008176
Publication Date:
September 27, 2018
Filing Date:
March 02, 2018
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C30B29/40; G02B5/22
Foreign References:
| JP2010517291A | 2010-05-20 |
Other References:
LAW, S. ET AL.: "Mid-infrared designer metals", OPTICS EXPRESS, vol. 20, no. 11, May 2012 (2012-05-01), pages 12155 - 12165, XP055545703
ARYAEE PANAH, M. E. ET AL.: "Highly doped InP as a low loss plasmonic material for mid-IR region", OPTICS EXPRESS, vol. 24, no. 25, 12 December 2016 (2016-12-12), pages 29077 - 29088, XP055545706
ARYAEE PANAH, M. E. ET AL.: "Highly doped InP as a low loss plasmonic material for mid-IR region", OPTICS EXPRESS, vol. 24, no. 25, 12 December 2016 (2016-12-12), pages 29077 - 29088, XP055545706
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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