Title:
SEMICONDUCTOR SINGLE CRYSTAL AND POWER GENERATION METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2015/125823
Kind Code:
A1
Abstract:
Provided is a semiconductor single crystal (10) having an n-type semiconductor section (12), a p-type semiconductor section (14), and an intrinsic semiconductor section (16) positioned therebetween, wherein the intrinsic semiconductor section (16) has a smaller band gap than that of the n-type semiconductor section (12) and the p-type semiconductor section (14).
Inventors:
MUNETOH SHINJI (JP)
FURUKIMI OSAMU (JP)
FURUKIMI OSAMU (JP)
Application Number:
PCT/JP2015/054437
Publication Date:
August 27, 2015
Filing Date:
February 18, 2015
Export Citation:
Assignee:
UNIV KYUSHU NAT UNIV CORP (JP)
International Classes:
H01L35/14; C30B29/52; H01L35/34
Foreign References:
| JPH0948696A | 1997-02-18 | |||
| US20120216848A1 | 2012-08-30 | |||
| JPH11220150A | 1999-08-10 | |||
| JP2009280877A | 2009-12-03 | |||
| JP2011523200A | 2011-08-04 | |||
| JPH08125233A | 1996-05-17 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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