Title:
SEMICONDUCTOR STRUCTURE, ARRAY STRUCTURE, MULTILAYER STACKED STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/173611
Kind Code:
A1
Abstract:
Embodiments of the present disclosure relate to a semiconductor structure, an array structure, and a manufacturing method therefor. The semiconductor structure comprises: a substrate, the substrate having a bit line structure; an active region, one end of the active region being located on the bit line structure, and in a direction perpendicular to the substrate, the active region comprising a first channel layer and a second channel layer at least wrapping the bottom surface and part of the side wall of the first channel layer; the bottom of the second channel layer being electrically connected to the bit line structure; a word line structure, in the direction perpendicular to the substrate, the word line structure being located on two opposite sides of the active region; and a source and a drain, located at two ends in an extension direction of the active region. In the semiconductor structure of the embodiments of the present disclosure, the active region has the first channel layer and the second channel layer, and by using a high-quality homojunction interface formed between the first channel layer and the second channel layer, the on-state current of the semiconductor structure can be increased, and current leakage can be reduced. Moreover, by using the second channel layer having fewer material defects, the number of free electrons in the active region is increased, and the on-state current is increased.
Inventors:
SHAO GUANGSU (CN)
QIU YUNSONG (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
XIAO DEYUAN (CN)
Application Number:
PCT/CN2022/099714
Publication Date:
September 21, 2023
Filing Date:
June 20, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN112997319A | 2021-06-18 | |||
| CN110957319A | 2020-04-03 | |||
| CN103500764A | 2014-01-08 | |||
| CN108461496A | 2018-08-28 | |||
| CN104425611A | 2015-03-18 | |||
| CN113594163A | 2021-11-02 | |||
| CN112086455A | 2020-12-15 | |||
| US20160064662A1 | 2016-03-03 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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