Title:
SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD, SEMICONDUCTOR STRUCTURE AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/130608
Kind Code:
A1
Abstract:
The present disclosure provides a semiconductor structure manufacturing method, a semiconductor structure and a memory. The semiconductor structure comprises a substrate, the substrate comprising a columnar base body and an isolation layer filled around the columnar base body. A word line groove is provided in the substrate, and the word line groove extends along a direction parallel to the surface of the substrate. A part of the word line groove intersecting with the columnar base body forms a first groove portion, and a first word line electrically conductive layer, a second word line electrically conductive layer and an insulating layer are provided in the first groove portion sequentially from bottom to top. A part of the word line groove intersecting with the isolation layer forms a second groove portion, and a second word line electrically conductive layer and an insulating layer are provided in the second groove portion sequentially from bottom to top.
Inventors:
LU JINGWEN (CN)
Application Number:
PCT/CN2022/087125
Publication Date:
July 13, 2023
Filing Date:
April 15, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN108807282A | 2018-11-13 | |||
| CN107680969A | 2018-02-09 | |||
| CN107240586A | 2017-10-10 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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