Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/087271
Kind Code:
A1
Abstract:
The present application provides a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a high-resistance silicon substrate and a compound layer located on the high-resistance silicon substrate. By performing local n-type ion implantation, local n-type ion diffusion, selection zone epitaxial growth, and the like on the high-resistance silicon substrate, a plurality of n-type semiconductor regions are formed at an upper portion of the high-resistance silicon substrate, and a p-type semiconductor conductive region formed due to the diffusion of Al and Ga atoms in the compound layer at the upper portion of the high-resistance silicon substrate is eliminated, so that parasitic capacitance due to a conductive substrate is reduced, the resistivity of the high-resistance silicon substrate under a high temperature condition can be improved, and the efficiency and radio frequency characteristics of a microwave device composed of the entire semiconductor structure are further improved.
Inventors:
CHENG KAI (CN)
Application Number:
PCT/CN2018/112657
Publication Date:
May 07, 2020
Filing Date:
October 30, 2018
Export Citation:
Assignee:
ENKRIS SEMICONDUCTOR INC (CN)
International Classes:
H01L27/14
Foreign References:
| CN1371133A | 2002-09-25 | |||
| CN205376554U | 2016-07-06 | |||
| CN104064635A | 2014-09-24 | |||
| US20060035449A1 | 2006-02-16 | |||
| US20130099249A1 | 2013-04-25 | |||
| US20060003514A1 | 2006-01-05 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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