Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/191629
Kind Code:
A1
Abstract:
A semiconductor structure and a manufacturing method therefor, solving the problem of existing semiconductor structures having a complicated manufacturing process and poor stability and reliability. The semiconductor structure comprises: a substrate (1); a channel layer (23) and a barrier layer (24) sequentially superposed on the substrate (1), wherein the channel layer (23) and the barrier layer (24) are made of a GaN-based material, and the upper surface of the barrier layer (24) is a Ga face; and a p-type GaN-based semiconductor layer (5) formed in a gate region of the barrier layer (24), wherein the upper surface of the p-type GaN-based semiconductor layer (5) is an N face.
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Inventors:
CHENG KAI (CN)
Application Number:
PCT/CN2019/079741
Publication Date:
October 01, 2020
Filing Date:
March 26, 2019
Export Citation:
Assignee:
ENKRIS SEMICONDUCTOR INC (CN)
International Classes:
H01L29/778
Foreign References:
| CN106206295A | 2016-12-07 | |||
| CN105655395A | 2016-06-08 | |||
| CN101355129A | 2009-01-28 | |||
| CN104051522A | 2014-09-17 |
Other References:
郝跃 等 (HAO, YUE ET AL.): "第8章 8.1 腐蚀法分析GaN位错类型和密度 (Non-official translation: chapter 8, section 8.1, Analysis of GaN Dislocation Type and Density by Corrosion Method)", 《氮化物宽禁带半导体材料与电子器件》科学出版社 (NON-OFFICIAL TRANSLATION: NITRIDE WIDE BANDGAP SEMICONDUCTOR MATERIAL AND ELECTRONIC DEVICE, SCIENCE PRESS), 13 January 2013 (2013-01-13), DOI: 20191206100400Y
Attorney, Agent or Firm:
BEIJING BRIGHT IP AGENCY CO., LTD. (CN)
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