Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/248415
Kind Code:
A1
Abstract:
A semiconductor structure and a manufacturing method therefor. The method comprises: provide an N-type semiconductor layer (11), a light-emitting layer (12), a P-type ion-doped layer (13), and a barrier material layer (14') that are distributed from bottom to top; pattern the barrier material layer (14') to form a barrier layer (14), the barrier layer (14) at least having an opening (14a) to expose a part of the region of the P-type ion-doped layer (13); use the barrier layer (14) as a mask to activate P-type doped ions in the exposed P-type ion-doped layer (13) so as to form an activated region (131), and the P-type ion-doped layer (13) covered by the barrier layer (14) forms an inactivated region (132).
Inventors:
ZHU DANDAN (CN)
ZHANG LIYANG (CN)
CHENG KAI (CN)
ZHANG LIYANG (CN)
CHENG KAI (CN)
Application Number:
PCT/CN2020/095668
Publication Date:
December 16, 2021
Filing Date:
June 11, 2020
Export Citation:
Assignee:
ENKRIS SEMICONDUCTOR INC (CN)
International Classes:
H01L33/00
Foreign References:
| CN101601142A | 2009-12-09 | |||
| CN209561450U | 2019-10-29 | |||
| CN1443373A | 2003-09-17 | |||
| CN102067340A | 2011-05-18 | |||
| US20080118998A1 | 2008-05-22 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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