Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/188342
Kind Code:
A1
Abstract:
Embodiments of the present application provide a semiconductor structure and a manufacturing method therefor. The manufacturing method for a semiconductor structure comprises: providing a substrate; forming a lower electrode layer on the substrate, a crystal structure of the lower electrode layer comprising a tetragonal system; by taking the lower electrode layer as a crystal seed layer, forming a first dielectric layer on the surface of the lower electrode layer, a crystal structure of the first dielectric layer comprising a tetragonal system; and forming a first current blocking layer on the surface of the first dielectric layer.
Inventors:
YUAN PAN (CN)
SU XINGSONG (CN)
ZHANG QIANG (CN)
YING ZHAN (CN)
SU XINGSONG (CN)
ZHANG QIANG (CN)
YING ZHAN (CN)
Application Number:
PCT/CN2021/109969
Publication Date:
September 15, 2022
Filing Date:
August 02, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L49/02; H01L27/108
Foreign References:
| CN113054105A | 2021-06-29 | |||
| CN109841622A | 2019-06-04 | |||
| CN112447719A | 2021-03-05 | |||
| US20080203529A1 | 2008-08-28 | |||
| CN108807345A | 2018-11-13 | |||
| US20200395438A1 | 2020-12-17 | |||
| US20170004967A1 | 2017-01-05 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
Download PDF: