Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/004986
Kind Code:
A1
Abstract:
Disclosed in the embodiments of the present application are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate, in which isolation trenches are formed and divide part of the substrate into a plurality of active areas extending in a first direction; a first word line structure located in the isolation trench between two active areas in the first direction, the bottom of the first word line structure being located in a first set depth position in the substrate; and a second word line structure located in the active areas, the bottom of the second word line structure being located in a second set depth position in the substrate, wherein a first depth corresponding to the first set depth position is greater than or equal to a second depth corresponding to the second set depth position, and the difference between the first depth and the second depth is less than a preset value.
Inventors:
LIU XIANG (CN)
Application Number:
PCT/CN2021/121068
Publication Date:
February 02, 2023
Filing Date:
September 27, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN207353225U | 2018-05-11 | |||
| CN108899309A | 2018-11-27 | |||
| CN112885770A | 2021-06-01 | |||
| CN210272310U | 2020-04-07 | |||
| US20110037111A1 | 2011-02-17 | |||
| CN202110864749A | 2021-07-29 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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