Title:
SEMICONDUCTOR STRUCTURE, MANUFACTURING METHOD THEREFOR, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/029648
Kind Code:
A1
Abstract:
Embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure, a manufacturing method therefor, and a memory. The semiconductor structure may at least comprise: multiple transistors arranged in a staggered manner, the transistors sharing one same source plate, wherein channels of the transistors are on the source plate, and the lengthwise direction of the channels of the transistors is perpendicular to the surface of the source plate, the material of the channels comprising an oxide semiconductor; multiple drain contact elements electrically connected to the drains of the transistors, an odd number of transistors sharing one same drain contact element, and the transistors sharing one drain contact element being driven by one same word line; multiple magnetic tunnel junctions on the drain contact elements, the magnetic tunnel junctions being electrically connected to the drain contact elements in a one-to-one correspondence. Embodiments of the present application provide a novel semiconductor structure.
Inventors:
WANG XIAOGUANG (CN)
ZENG DINGGUI (CN)
LI HUIHUI (CN)
CAO KANYU (CN)
ZENG DINGGUI (CN)
LI HUIHUI (CN)
CAO KANYU (CN)
Application Number:
PCT/CN2022/098429
Publication Date:
March 09, 2023
Filing Date:
June 13, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H01L27/22; H01L43/08; H01L43/12
Foreign References:
| US20160233333A1 | 2016-08-11 | |||
| CN112909039A | 2021-06-04 | |||
| CN102544049A | 2012-07-04 | |||
| CN113140588A | 2021-07-20 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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