SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2023/130698

A1

The present application relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises a substrate and a first conductive layer; a plurality of first trenches extending in a first direction and a plurality of second trenches extending in a second direction are formed in the substrate, and a plurality of active pillars are disposed between the first trenches and the second trenches, wherein the first direction and the second direction intersect; and the first conductive layer is located on the partial side walls, in the first direction, of the active pillars. According to the present application, the first conductive layer is provided on the partial side walls, in the first direction, of the active pillars, so that the size of the active pillars in the first direction is increased, the purpose of increasing the area of the active pillars is achieved, the contact resistance with capacitor contacts subsequently formed on the active pillars is further reduced, and the performance of the semiconductor structure is improved.

JANG SEMYEONG (CN)
MOON JOONSUK (CN)
XIAO DEYUAN (CN)
CHIN JO-LAN (CN)

PCT/CN2022/104041

July 13, 2023

July 06, 2022

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CHANGXIN MEMORY TECH INC (CN)

H01L27/108

US20120119286A1	2012-05-17
CN113611671A	2021-11-05
CN1401140A	2003-03-05
CN106158650A	2016-11-23

LEADER PATENT & TRADEMARK FIRM (CN)

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