Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/040883
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure and a manufacturing method therefor. The structure comprises: a substrate, which comprises a first active area and a second active area; a channel layer located on a surface of the substrate; a first gate electrode and a second gate electrode, wherein the first gate electrode is located above the part of the channel layer in the first active area, and the second gate electrode is located above the part of the channel layer in the second active area; first semiconductor layers, which are located on two sides of the first gate electrode and are embedded into the channel layer and the substrate, the material of the first semiconductor layers being the same as that of the channel layer; and second semiconductor layers, which are located on two sides of the second gate electrode and are embedded into the channel layer and the substrate, the material of the second semiconductor layers being different from that of the channel layer.
Inventors:
ZHANG WEIMIN (CN)
Application Number:
PCT/CN2023/076338
Publication Date:
February 29, 2024
Filing Date:
February 16, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/786; H01L21/8234; H01L21/8238; H01L27/088; H01L27/092; H01L29/423; H01L29/06; H01L29/08; H01L29/10
Foreign References:
| CN115411091A | 2022-11-29 | |||
| CN107785313A | 2018-03-09 | |||
| CN105097698A | 2015-11-25 | |||
| CN114759094A | 2022-07-15 | |||
| CN102931222A | 2013-02-13 | |||
| US20110260213A1 | 2011-10-27 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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