Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/041186
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method therefor, and an electronic device, for use in mitigating the problem that different fins have different widths when the fins are unevenly distributed. The manufacturing method for a semiconductor structure comprises: forming multiple first fin portions on a first surface of a substrate, the multiple first fin portions protruding side by side from the first surface; etching some of the first fin portions to form blank regions among the remaining multiple first fin portions; forming a protective layer on the surfaces of the remaining multiple first fin portions; and etching the regions of the substrate that are not covered by the remaining multiple first fin portions, and forming second fin portions below the remaining multiple first fin portions, each first fin portion and the second fin portion located therebelow forming a fin. The semiconductor structure is applied to an electronic device so as to improve the performance of the electronic device.
Inventors:
CHANG FENGYI (CN)
Application Number:
PCT/CN2023/103521
Publication Date:
February 29, 2024
Filing Date:
June 28, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L21/82
Foreign References:
| US20150279971A1 | 2015-10-01 | |||
| CN105826193A | 2016-08-03 | |||
| CN106960794A | 2017-07-18 | |||
| CN112309977A | 2021-02-02 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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