Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/045211
Kind Code:
A1
Abstract:
Embodiments of the present disclosure relate to a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate, a plurality of capacitive contact structures arranged at intervals being formed on the substrate; isolation structures, the isolation structures being located on the substrate and located between adjacent capacitive contact structures, and the top surfaces of the isolation structures being not higher than the top surfaces of the capacitive contact structures; and isolation recesses, the isolation recesses extending from the top surfaces of the isolation structures into the isolation structures, and there being a gap between the isolation recesses and the capacitive contact structures.
Inventors:
ZHOU LIUTAO (CN)
PAN SHUO (CN)
PAN SHUO (CN)
Application Number:
PCT/CN2022/118313
Publication Date:
March 07, 2024
Filing Date:
September 13, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768
Foreign References:
| CN113394162A | 2021-09-14 | |||
| CN114121961A | 2022-03-01 | |||
| CN209029380U | 2019-06-25 | |||
| CN112864153A | 2021-05-28 | |||
| US20150132942A1 | 2015-05-14 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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