Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/065989
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate; bit line structures, the bit line structures being located on the substrate and arranged at intervals; and capacitor contact structures, located between adjacent bit line structures. Each capacitor contact structure comprises: a contact plug, a landing pad and a barrier layer located between the landing pad and the contact plug, the top surface of the contact plug being lower than the top surfaces of the bit line structures, the top portion of the contact plug comprising a transition layer, and the barrier layer being further located between the transition layer and the bit line structures. Therefore, reliability of the semiconductor structure is improved.
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Inventors:
LU YONG (CN)
SONG XIAOJIE (CN)
CHEN XIAOPENG (CN)
HAN KAI (CN)
SONG XIAOJIE (CN)
CHEN XIAOPENG (CN)
HAN KAI (CN)
Application Number:
PCT/CN2022/133246
Publication Date:
April 04, 2024
Filing Date:
November 21, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/538; H01L21/768
Foreign References:
| CN114093870A | 2022-02-25 | |||
| CN112490180A | 2021-03-12 | |||
| CN115020376A | 2022-09-06 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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