Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/066567
Kind Code:
A1
Abstract:
Embodiments of the present application relate to the technical field of semiconductors, and provide a semiconductor structure and a manufacturing method therefor, and an electronic device, for use in further improving the electron mobility of semiconductor structures. The manufacturing method for a semiconductor structure comprises: forming a gate and a gate side wall which are located on a semiconductor substrate, the gate side wall being arranged on a side surface of the gate; performing doping and first amorphous ion implantation on the semiconductor substrate on two opposite sides of the gate to form a first region and a second region; performing second amorphous ion implantation on at least one of the first region and the second region, the depth of the second amorphous ion implantation being greater than that of the first amorphous ion implantation; forming a stress layer, the stress layer covering at least the first region, the second region, the gate and the gate side wall; and performing annealing, so that a source is formed in the first region, a drain is formed in the second region, and dislocation occurs in at least one of the source and the drain.
Inventors:
WANG TAO (CN)
Application Number:
PCT/CN2023/103518
Publication Date:
April 04, 2024
Filing Date:
June 28, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/335; H01L21/336; H01L29/06; H01L29/772
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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