Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/121339
Kind Code:
A1
Abstract:
Disclosed in embodiments of the present disclosure are a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure comprises: a substrate; a plurality of discrete lower electrodes located on the substrate; and a first dielectric layer and a second dielectric layer located between the lower electrodes, wherein the second dielectric layer is located between the first dielectric layer and the lower electrodes, and the upper thickness of the second dielectric layer is less than the bottom thickness of the second dielectric layer.
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Inventors:
SU XINGSONG (CN)
LIU YANGHAO (CN)
YU MENGKANG (CN)
BAI WEIPING (CN)
LIU YANGHAO (CN)
YU MENGKANG (CN)
BAI WEIPING (CN)
Application Number:
PCT/CN2021/110734
Publication Date:
June 16, 2022
Filing Date:
August 05, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108; H01L21/8242
Foreign References:
| CN111106095A | 2020-05-05 | |||
| US5026659A | 1991-06-25 | |||
| CN111261774A | 2020-06-09 | |||
| US20040012047A1 | 2004-01-22 | |||
| US20080029801A1 | 2008-02-07 | |||
| KR20050033202A | 2005-04-12 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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