Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/160625
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors and provides a semiconductor structure and a manufacturing method for a semiconductor structure. The semiconductor structure comprises a substrate; a capacitor structure is formed in the substrate; the capacitor structure comprises a lower plate, a dielectric layer, an upper plate, and a protective layer; the lower plate is located on the substrate; the dielectric layer covers the surface of the lower plate; the upper plate covers the dielectric layer; and the protective layer is formed on the surface of the upper plate parallel to the substrate. By means of the protective layer formed on the upper surface of the upper plate, the resistance performance of the capacitor structure can be improved, thereby improving the use performance of the semiconductor structure.
Inventors:
WU HONGMIN (CN)
TING YU-SHENG (CN)
TING YU-SHENG (CN)
Application Number:
PCT/CN2021/108173
Publication Date:
August 04, 2022
Filing Date:
July 23, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L49/02
Foreign References:
| CN112909169A | 2021-06-04 | |||
| CN107968044A | 2018-04-27 | |||
| US20090170272A1 | 2009-07-02 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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